NTE5645 Datasheet, PDF (1/2 Pages) NTE Electronics – TRIAC - 10A Isolated Tab

NTE5645
TRIAC – 10A
Isolated Tab
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, T_J = +100°C), V_DRM . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T_C = +75°C, Conduction Angle of 180°C), I_T(RMS) . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I_TSM . . . . . . . . . 100A
Peak Gate–Trigger Current (3µs Max), I_GTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate–Power Dissipation (I_GT ≤ I_GTM for 3µs Max), P_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate–Power Dissipation, P_G(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (T_C = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
I_DRM V_DRM = 600V, Gate Open, T_J = +100°C – – 2 mA
Max. On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
V_TM
I_H
Critical
dv/dt
I_T = 14A
Gate Open
V_D = 600V, Gate Open, T_C = +100°C
– – 2.2 V
– – 50 mA
– 5 – V/µs
DC Gate Trigger Current
T₂ (+) Gate (+), T₂ (–) Gate (–)
T₂ (+) Gate (–), T₂ (–) Gate (+)
I_GT
V_D = 12V, R_L = 30Ω
– – 50 mA
– – 80 mA