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NTE5629 Datasheet, PDF (1/2 Pages) NTE Electronics – TRIAC - 400VRM, 4Amp | |||
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NTE5629
TRIAC â 400VRM, 4Amp
Description:
The NTE5629 TRIAC is a biâdirectional triode thyristor in a TO202 type case. This device may be
switched from offâstate to conduction for either polarity of applied voltage with positive or negative
gateâtrigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak OffâState Voltage (Gate Open, TJ = +110°C, Note 1), VDRM . . . . . . . . . . . . . . 400V
RMS OnâState Current (TC = +80°C, Conduction Angle = 360°), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A
NonâRepetitive Peak Surge OnâState Current (OneâCycle, at 50Hz or 60Hz), ITSM . . . . . . . . 40A
Peak GateâTrigger Current (for 3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Peak GateâPower Dissipation (IGT ⤠IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Average GateâPower Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â40° to +150°C
Thermal Resistance, JunctionâtoâCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W Typ
Electrical Characteristics: (At Specified Case Temperature)
Peak OffâState Current (Gate Open, TC = +110°C, VDRM = 400V, Note 1), IDRM . . . . . 0.5mA Max
Maximum OnâState Voltage (TC = +25°C, IT = 4A, Note 1), VTM . . . . . . . . . . . . . . . . . . . . . 1.6V Max
DC Holding Current (Gate Open, TC = +25°C, Note 1), IHold . . . . . . . . . . . . . . . . . . . . . . . . 5mA Max
Critical RateâofâRise of OffâState Voltage, Critical dv/dt
(VD = 400V, Gate Open, TC = +110°C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/µs
Critical rateâofâRise of commutation Voltage, Commutating dv/dt
(VD = 400V, IT = 4A, Gate Unenergized, TC = +80°C, Note 1) . . . . . . . . . . . . . . . . . . . . 1V/µs
DC GateâTrigger Current (VD = 12VDC, RL = 60â¦, TC = +25°C), IGT . . . . . . . . . . . . . . . . . 3mA Max
(T2+ Gate +, T2â Gate â) Quads I and III
(T2+ Gate â, T2â Gate +) Quads II and IV
DC GateâTrigger Voltage (VD = 12VDC, RL = 60â¦, TC = +25°C), VGT . . . . . . . . . . . . . . . . . . 2V Max
GateâControlled TurnâOn Time, Tgt
(VD = 400V, IGT = 80mA, tR = 0.1µs, IT = 6A (Peak), TC = +25°C) . . . . . . . . . . . . . . . . . . . 3µs
Note 1. All values apply in either direction.
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