NTE5608 Datasheet, PDF (1/2 Pages) NTE Electronics – TRIAC 8 Amp

NTE5608 thru NTE5610
TRIAC
8 Amp
Description:
The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN
devices in a TO220 type package designed for general purpose applications where moderate gate
sensitivity is required.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Repetitive Peak Off–State Voltage (T_J = –40° to +125°C, R_GK = 1kΩ), V_DRM
NTE5608 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5609 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
On–State Current (All Conduction Angles, T_C = +85°C), I_T(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Non–Repetitive On–State Current (Half Cycle), I_TSM
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77A
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Fusing Current (t = 10ms), I²t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A²s
Peak Gate Current (t = 10µs Max), I_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate Dissipation (t = 10µs Max), P_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Gate Dissipation (t = 20ms Max), P_G(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T_L . . . . . . . . . . . . . . . +250°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Off–State Leakage Current
On–State Voltage
On–State Threshold Voltage
On–State Slope Resistance
I_DRM
V_T
V_T(TO)
r_T
V_D = V_DRM, R_GK = 1kΩ, T_J = +25°C
V_D = V_DRM, R_GK = 1kΩ, T_J = +125°C
I_T = 12A, T_J = +25°C
T_J = +125°C
T_J = +125°C
Min Typ Max Unit
–
–
5 µA
–
–
2 mA
–
– 1.85 V
–
–
1
V
–
– 80 mΩ