NTE56 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Gain Switch and Pass Regulator

NTE56
Silicon NPN Transistor
High Gain Switch and Pass Regulator
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
I_CBO
I_EBO
V_CB = 100V
V_EB = 6V
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 25mA
DC Current Gain
h_FE V_CE = 4V, I_C = 0.5A
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 2A, I_B = 50mA
Current Gain–Bandwidth Product
f_T
V_CE = 12V, I_E = –0.2A
Min Typ Max Unit
– – 10 µA
– – 100 µA
80 – – V
500 – –
– – 0.5 V
– 15 – MHz