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NTE558 Datasheet, PDF (1/1 Pages) NTE Electronics – General Purpose Silicon Rectifier
NTE558
General Purpose Silicon Rectifier
Description:
The NTE558 is a general purpose silicon rectifier in a DO41 type case designed for low high voltage
fast recovery applications.
Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1050V
Average Rectified Forward Current. IO
(Single Phase, Resistive Load, 60Hz, TA = +75°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Forward Surge Current, IFSM
(8.3ms Single Half Sine–Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . . 50A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Electrical Characteristics: (TA = +25°C unless otherwise specified. Single Phase, Half Wave,
60Hz, Resistve or Inductive Load)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Instantaneous Forward
Voltage Drop
VF IO = 1A, TJ = +25°C
– – 1.3 V
Maximum DC Reverse Current
Maximum Full–Cycle Average
ReverseCurrent
IR
IR(AV)
VR = 1500V, TA = +25°C
Full Cycle, TL +55°C,
.375” (9.5mm) lead length
– – 5 µA
– – 100 µA
Maximum Reverse Recovery Time
Typical Junction capacitance
trr IF = 500mA, IR = 1A, IRR = 250mA – – 250 ns
C Note 1
– 20 – pF
Note 1. Measured at 1MHz and applied reverse voltage of 4V.
1.100
(27.94)
Min
.210 (5.33)
Max
.034 (0.87) Dia Max
.107 (2.72) Dia Max
Color Band Denotes Cathode