NTE5514 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR)

NTE5514 thru NTE5516
Silicon Controlled Rectifier (SCR)
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (T_J = +100°C), V_DRM
NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Reverse Voltage (T_J = +100°C), V_RRM
NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T_C = +75°C), I_T(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I_TSM . . . . . . . . . 200A
Peak Gate–Trigger Current (3µs Max), I_GTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak Gate–Power Dissipation (I_GT ≤ I_GTM for 3µs Max), P_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, P_G(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Operating Temperatue Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3°C/W
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
I_DRM, T_J = +100°C, Gate Open,
I_RRM V_DRM and V_RRM = Max. Rating
– – 2.0 mA
Maximum On–State Voltage (Peak) V_TM T_C = +25°C
– – 1.9 V
Peak On–State Current
I_TM
– – 40 A
DC Holding Current
I_H T_C = +25°C, Gate Open
– – 50 mA
DC Gate–Trigger Current
I_GT Anode Voltage = 12V, R_L = 30Ω, T_C = +25°C – – 25 mA
DC Gate–Trigger Voltage
V_GT Anode Voltage = 12V, R_L = 30Ω, T_C = +25°C – – 2.0 V
Gate Controlled Turn–On Time
t_gt t_d + t_r, I_GT = 150mA
– 2.5 – µs
Critical Rate–of–Rise of
Off–State Voltage
Critical T_C = +100°C, Gate Open
dv/dt
– 100 – V/µs