NTE5417 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) 10 Amp

NTE5417 thru NTE5419
Silicon Controlled Rectifier (SCR)
10 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T_C = +110°C), V_RRM
NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (T_C = +110°C), V_DRM
NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T_C = +80°C, Conduction Angle of 180°), I_T(RMS) . . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I_TSM . . . . . . . . . . 100A
Peak Gate–Trigger Current (3µs Max), I_GTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (I_GT ≤ I_GTM), P_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Average Gate Power Dissipation, P_G(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak Off–State Current
Maximum Peak On–State Voltage
DC Holding Current
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Gate Controlled Turn–On Time
Critical Rate of Off–State Voltage
I_RRM
I_DRM
V_TM
I_HOLD
I_GT
V_GT
t_gt
dv/dt
(critical)
V_RRM = Max, V_DRM = Max,
T_C = +110°C
I_T = 10A
Gate Open
V_D = 6VDC, R_L = 60Ω
V_D = 6VDC, R_L = 60Ω
I_GT = 100mA
Gate Open, T_C = +100°C
Min Typ Max Unit
– – 0.5 mA
– – 0.5 mA
– – 1.8 V
– – 30 mA
– – 25 mA
– – 1.5 V
– 2.5 – µs
– 200 – V/µs