NTE492 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

NTE492
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, I_D
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics (Note 2)
I_DSS V_DS = 130V, V_GS = 0
V_(BR)DSX V_GS = 0, I_D = 100µA
I_GSS V_GS = 15V, V_DS = 0
Gate Threshold Voltage
Static Drain–Source ON Resist-
ance
V_GS(Th) I_D = 1mA, V_DS = V_GS
r_DS(on) V_GS = 10V, I_D = 100mA
Small–Signal Characteristics
V_GS = 10V, I_D = 250mA
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Forward Transconductance
C_iss
C_rss
C_oss
g_fs
V_DS = 25V, V_GS = 0, f = 1MHz
V_DS = 25V, V_GS = 0, f = 1MHz
V_DS = 25V, V_GS = 0, f = 1MHz
V_DS = 25V, I_D = 250mA
Note 2. Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
– – 30 nA
200 – –
V
– 0.01 10.0 nA
1.0 – 3.0 V
– 4.5 6.0 Ω
– 4.8 6.4 Ω
– 60 – pF
– 6.0 – pF
– 30 – pF
200 400 – mmhos