NTE491 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

NTE491
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (R_GS = 1MΩ), V_DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
Drain Current, I_D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, R_{th (JA)} . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5°C/W
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T_L . . . . . . . . . . . . +300°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate–Body Leakage Current, Forward
ON Characteristics (Note 1)
I_DSS
V_(BR)DSS
I_GSSF
V_DS = 48V, V_GS = 0
V_DS = 48V, V_GS = 0, T_J = +125°C
V_GS = 0, I_D = 10µA
V_GSF = 15V, V_DS = 0
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source ON–Voltage
ON–State Drain Current
Forward Transconductance
V_GS(Th)
r_DS(on)
V_DS(on)
I_d(on)
g_fs
I_D = 1mA, V_DS = V_GS
V_GS = 10V, I_D = 500mA
V_GS = 4.5V, I_D = 75mA
V_GS = 10V, I_D = 500mA
V_GS = 4.5V, I_D = 75mA
V_GS = 4.5V, V_DS = 10V
V_DS = 10V, I_D = 200mA
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
– – 1.0 µA
– – 1.0 mA
60 – –
V
– – –10 nA
0.8 – 3.0 V
– – 5.0 Ω
– – 6.0 Ω
– – 2.5 V
– – 0.45 V
75 – –
mA
100 – – µmhos