NTE490 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

NTE490
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current (Note 1), I_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics (Note 2)
V_(BR)DSS V_GS = 0, I_D = 100µA
I_GSS V_GS = 15V, V_DS = 0
Gate Threshold Voltage
Static Drain–Source ON Resistance
V_GS(Th) V_DS = V_GS, I_D = 1mA
r_DS(on) V_GS = 10V, I_D = 200mA
Drain Cutoff Current
Forward Transconductance
Small–Signal Characteristics
I_D(off)
g_fs
V_DS = 25V, V_GS = 0
V_DS = 10V, I_D = 250mA
Input Capacitance
Switching Characteristics
C_iss V_DS = 10V, V_GS = 0, f = 1MHz
Turn–On Time
Turn–Off Time
t_on I_D = 200mA
t_off I_D = 200mA
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
60 90 –
V
– 0.01 10 nA
0.8 2.0 3.0 V
– 1.8 5.0 Ω
– – 0.5 µA
– 200 – mmhos
– – 60 pF
– 4 10 ns
– 4 10 ns