NTE475 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

NTE475
Silicon NPN Transistor
RF Power Output
Description:
The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier
and driver applications to 300MHz.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage,V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.3mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
V_CEO(sus) I_C = 200mA, Note 1
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 0.25mA, I_E = 0
Emitter–Base Breakdown Voltage
Dynamic Characteristics
V_(BR)EBO I_E = 1mA, I_C = 0
Current Gain – Bandwidth Product
Output Capacitance
f_T
I_C = 100mA, V_CE = 13.6V, f = 100MHz
C_ob V_CB = 13.6V, I_E = 0, f = 100kHz
Functional Tests
Power Input
Common–Emitter Amplifier Power Gain
P_in R_L = 50Ω, P_out = 12W, f = 175MHz
G_pe
Collector Efficiency
η
Min Typ Max Unit
18 – – V
36 – – V
4––V
– 350 – MHz
– 12.5 20.0 pF
– – 4.0 W
4.77 5.0 – dB
80 – – %
Note 1. Pulsed thru a 25mH inductor.