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NTE467 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon N-channel JFET Transistor Chopper, High Speed Switch
NTE467
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V(BR)GSS IG = 10µA, VDS = 0
30 –
–
V
Gate Reverse Current
IGSS VGS = –15V, VDS = 0
–
– 1.0 nA
VGS = –15V, VDS = 0, TA = +100°C
–
– 1.0 µA
Drain Cutoff Current
ID(off) VDS = 15V, VGS = –12V
–
– 1.0 nA
VDS = 15V, VGS = –12V, TA = +100°C –
– 1.0 µA
ON Characteristics
Zero–Gate Voltage Drain Current
Drain–Source ON–Voltage
Static Drain–Source ON Resistance
IDSS
VDS(on)
rDS(on)
VDS = 20V, VGS = 0, Note 1
ID = 12mA, VGS = 0
ID = 1mA, VGS = 0
50 –
– mA
–
– 0.5 V
–
– 30 Ω
Input Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Ciss VGS = –12V, VDS = 0, f = 1MHz
Crss VGS = –12V, VDS = 0, f = 1MHz
–
– 10 pF
–
–
4 pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 10V, VGS(on) = 0,
VGS(off) = 10V, ID(on) = 12mA,
RG = 50Ω
–
–
4 ns
–
–
5 ns
–
–
5 ns
–
– 10 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 3%.
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