NTE466 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon N-Channel JFET Transistor Chopper, High Speed Switch

NTE466
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Drain–Gate Voltage, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate–Source Voltage, V_GSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40V
Forward Gate Current, I_G(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Drain Cutoff Current
ON Characteristics
V_(BR)GSS I_G = 1A, V_DS = 0
–40 –
–
V
I_GSS V_GS = –20V, V_DS = 0
–
– 0.25 nA
V_GS = –20V, V_DS = 0, T_A = +150°C
–
– 0.5 µA
V_GS(off) V_DS = 15V, I_D = 0.5nA
–4 – –10 V
I_D(off) V_DS = 15V, V_GS = –10V
–
– 0.25 nA
V_DS = 15V, V_GS = –10V, T_A = +150°C –
– 0.5 µA
Zero–Gate–Voltage Drain Current
Drain–Source ON–Voltage
Small–Signal Characteristics
Drain–Source “ON” Resistance
Input Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
I_DSS V_DS = 15V, V_GS = 0, Note 1
V_DS(on) I_D = 20mA, V_GS = 0
r_DS(on)
C_iss
C_rss
V_GS = 0, I_D = 0, f = 1kHz
V_DS = 0, V_GS = –10V, f = 1MHz
V_DS = 0, V_GS = –10V, f = 1MHz
50 –
– mA
–
– 0.75 V
–
– 25 Ω
–
– 18 pF
–
– 0.8 pF
Turn–On Delay Time
Rise Time
Turn–Off Time
t_d(on)
t_r
t_off
V_DD = 10V, I_D(on) = 20mA,
V_GS(on) = 0, V_GS(off) = –10V
–
–
6 ns
–
–
3 ns
–
– 25 ns
Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle ≤ 10%.
Note 2. The I_D(on) values are nominal; exact values vary slightly with transistor parameters.