NTE459 Datasheet, PDF (1/2 Pages) NTE Electronics – N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

NTE459
N–Channel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Drain–Gate Voltage, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V
Drain Current, I_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
ON Characteristics
V_(BR)GSS I_G = –1µA, V_DS = 0
–50
I_GSS V_GS = –30V, V_DS = 0
–
V_GS = –30V, V_DS = 0, T_A = +150°C –
V_GS(off) I_D = 0.5nA, V_DS = 15V
–
V_GS I_D = 200µA, V_DS = 15V
–1
––
– –0.1
– –100
– –6
– –4
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
I_DSS V_DS = 15V, V_GS = 0, Note 1
2 – 10
Forward Transfer Admittance
|y_fs| V_DS = 15V, V_GS = 0, f = 1kHz,
Note 1
3000 – 6500
Output Admittance
V_DS = 15V, V_GS = 0, f = 100MHz 3000 –
–
|y_os| V_DS = 15V, V_GS = 0, f = 1kHz,
Note 1
– – 20
Input Capacitance
Reverse Transfer Capacitance
C_iss V_DS = 15V, V_GS = 0, f = 1MHz
C_rss V_DS = 15V, V_GS = 0, f = 1MHz
––6
––3
Note 1. Pulse Test: Pulse Width ≤ 100ms, Duty Cycle ≤ 10%.
Unit
V
nA
nA
V
V
mA
µmho
µmho
µmho
pF
pF