NTE457 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon N-Channel JFET Transistor General Purpose Amp, Switch

NTE457
Silicon N–Channel JFET Transistor
General Purpose Amp, Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Reverse Gate–Source Voltage, V_GSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25V
Gate Current, I_G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
ON Characteristics
V_(BR)GS
S
I_GSS
V_GS(off)
V_GS
I_G = –10µA, V_DS = 0
V_GS = 15V, V_DS = 0
V_GS = 15V, V_DS = 0, T_A = +100°C
V_DS = 15V, I_D = 10nA
V_DS = 15V, I_D = 100µA
Zero–Gate Voltage Drain Current
Small–Signal Characteristics
I_DSS V_DS = 15V, V_GS = 0, Note 1
Forward Transfer Admittance
Common Source
|y_fs| V_DS = 15V, V_GS = 0, f = 1kHz,
Note 1
Output Admittance Common Source
|y_os| V_DS = 15V, V_GS = 0, f = 1kHz,
Note 1
Input Capacitance
Reverse Transfer Capacitance
C_iss V_DS = 15V, V_GS = 0, f = 1kHz
C_rss V_DS = 15V, V_GS = 0, f = 1kHz
Min Typ Max Unit
–25 – –
V
– – –1 mA
– – –200 mA
–0.5 – –6.0 V
– – –2.5 V
1 3 5 mA
1000 – 5000 µmhos
– 10 50 µmhos
– 4.5 7.0 pF
– 1.5 3.0 pF
Note 1. Pulse Test: Pulse Width ≤ 630ms, Duty Cycle ≤ 10%.