NTE399 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Video Amp (Compl to NTE2366)

NTE399
Silicon NPN Transistor
High Voltage Video Amp
(Compl to NTE2366)
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Collector Power Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
I_CBO
I_EBO
h_FE
f_T
C_ob
V_CE(sat)
V_BE(sat)
V_CB = 200V, I_E = 0
V_EB = 6V, I_C = 0
V_CE = 10V, I_C = 5mA
V_CB = 30V, I_C = 10mA
V_CB = 10V, f = 1MHz
I_C = 20mA, I_B = 2mA
I_C = 20mA, I_B = 2mA
Min Typ Max Unit
–
– 1.0 µA
–
– 1.0 µA
100 – 220
50 –
– MHz
–
– 7.5 pF
–
– 0.6 V
–
– 1.0 V