NTE398 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor TV Vertical Output (Compl to NTE375)

NTE398
Silicon PNP Transistor
TV Vertical Output
(Compl to NTE375)
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width ≤ 10ms, Duty Cycle ≤ 50%.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
I_CBO V_CB = 150V, I_E = 0
– – 50 µA
Emitter Cutoff Current
I_EBO V_EB = 4V, I_C = 0
– – 50 µA
DC Current Gain
h_FE V_CE = 10V, I_C = 400mA, Note 2 60 – 120
Gain Bandwidth Product
f_T V_CE = 10V, I_C = 400mA, Note 2 –
5
– MHz
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 500A, I_B = 50mA
– – 1.0 V
Note 2. Pulse Width ≤ 350µs, Duty Cycle ≤ 25%/Pulsed.