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NTE369 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor TV Vertical Deflection, Switch | |||
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NTE369
Silicon NPN Transistor
TV Vertical Deflection, Switch
Description:
The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters,
regulators, and switching circuits.
Features:
D High Voltage: VCBO = 800V
D Gain Specified to 200mA
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +150°C
Thermal Resistance, JunctionâtoâCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorâEmitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
V(BR)CEO
ICBO
IEBO
IC = 10mA, IB = 0
VCB = 800V
VEB = 6V, IC = 0
DC Current Gain
CollectorâEmitter Saturation Voltage
Dynamic Characteristics
hFE IC = 200mA, VCE = 10V
VCE(sat) IC = 500mA, IB = 50mA
Current GainâBandwidth Product
fT
IE = â100mA, VCE = 10V, f = 1MHz
Min Typ Max Unit
400 â â V
â â 100 mA
â â 100 mA
30 â â
â â 5V
â 7 â MHz
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