NTE345 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amp, Driver

NTE345
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
large–signal amplifier applications in industrial and commercial FM equipment operating to 175MHz.
This device is ideally suited for marine radio applications.
Features:
D Specified 13.6V, 160MHz Characteristics:
Output Power = 30W
Minimum Gain = 9dB
Efficiency = 60%
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.37W/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
ON Characteristics
V_(BR)CEO I_C = 100mA, I_B = 0
V_(BR)CBO I_C = 15mA, I_E = 0
V_(BR)EBO I_E = 5mA, I_C = 0
18 –
36 –
4
–
–V
–V
–V
DC Current Gain
Dynamic Characteristics
h_FE I_C = 1A, V_CE = 5V
5
–
–
Output Capacitance
C_ob V_CB = 15V, I_E = 0, f = 0.1 to 1MHz – 110 130 pF
Functional Tests (V_CC = 13.6V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
G_PE P_out = 30W, f = 160MHz
9 10 – dB
Collector Efficiency
η
P_out = 30W, f = 160MHz
60 –
–%