NTE339 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

NTE339
Silicon NPN Transistor
RF Power Output
Description:
The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large−
signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
D Specified 12.5 Volt, 50MHz Characteristics
Output Power = 40 Watts
Minimum Gain = 7.5dB
Efficiency = 50%
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Collector−Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V
Collector−Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Emitter−Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (T_C = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/°C
Operating Junction Temperature, T_j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperatures Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55°C/W
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V_(BR)CEO I_C = 200mA, I_B = 0, Note 2
V_(BR)CES I_C = 100mA, V_BE = 0, Note 2
V_(BR)EBO I_C = 0, I_E = 10mA
I_CBO V_CB = 15V, I_E = 0
I_CES V_CB = 15V, I_E = 0, T_A = +125°C
24 − − V
48 − − V
4 − −V
− − 1.0 mA
− − 10 mA
DC Current Gain
Dynamic Characteristics
h_FE V_CE = 5V, I_C = 2.4A
37−
Output Capacitance
Functional Test
C_ob V_CB = 12.5V, I_E = 0, f = 0.1 to 1.0MHz − 180 230 pF
Common−Emitter Amplifier Power Gain
Collector Efficiency
G_PE P_OUT = 40W, V_CC = 12.5V, f = 50MHz 7.5 −
η
50 −
− dB
−%
Note 2. Pulsed through 25mH inductor.