NTE326 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon P-Channel JFET Transistor General Purpose AF Amplifier

NTE326
Silicon P–Channel JFET Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Drain–Gate Voltage, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate–Source Voltage, V_GSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Forward Gate Current, I_G(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +135°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V_(BR)GSS I_G = 10µA, V_DS = 0
40 – –
V
Gate Reverse Current
I_GSS V_GS = 20V, V_DS = 0
––5
nA
V_GS = 20V, V_DS = 0, T_A = +100°C –
–
1
µA
Gate–Source Cutoff Voltage
V_GS(off) I_D = 1µA, V_DS = 15V
1.0 – 7.5
V
Gate–Source Voltage
V_GS I_D = 0.2mA, V_DS = 15V
0.8 – 4.5
V
ON Characteristics
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
I_DSS V_DS = 15V, V_GS = 0, f = 1kHz
2–9
mA
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Functional Characteristics
|y_fs| V_DS = 15V, V_GS = 0, f = 1kHz
|y_os| V_DS = 15V, V_GS = 0, f = 1kHz
C_iss V_DS = 15V, V_GS = 0, f = 1MHz
C_rss V_DS = 15V, V_GS = 0, f = 1MHz
1500 – 5000 µmho
–
– 75 µmho
–57
pF
–12
pF
Noise Figure
NF V_DS = 15V, V_GS = 0, R_G = 1MΩ,
– 1.0 2.5
dB
f = 100Hz, BW = 1Hz
Equivalent Short–Circuit Input Noise
Voltage
e_n V_DS = 15V, V_GS = 0, f = 100Hz,
BW = 1Hz
– 60 115 nV/pHz