NTE314 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) Power Regulator Switch

NTE314
Silicon Controlled Rectifier (SCR)
Power Regulator Switch
Description:
The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere
RMS, 400 Volt power supply and computer control applications to +100°C maximum junction.
Features:
D Low Forward “ON” Voltage
D All Diffused Junctions for Greater Parameter Uniformity
D Glass Passivated for Greater Stability
Absolute Maximum Ratings:
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V_DRM, V_RRM . . . . . . . . . . . . 400V
RMS Forward Current (T_C = +80°C, All Conduction Angles), I_T(RMS) . . . . . . . . . . . . . . . . . . . . 12.5A
Peak Forward Surge Current (1/2 Cycle Sine Wave, 60Hz, T_J = –40° to +100°C), I_TSM . . . . . 200A
Fusing Current (T_J = –40° to +100°C, t = 1 to 8.3ms), I²t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170A²s
Forward Peak Gate Power, P_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Forward Average Gate Power, P_G(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Forward Peak Gate Current, I_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Forward Gate Voltage, V_GF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V
Peak Reverse Gate Voltage, V_GR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7°C/W
Note 1. V_DRM and V_RRM can be applied on a continuous DC basis without incurrent damage. Ratings
apply for zero or negative gate voltage. Devices should not be tested for blocking capability
in a manner such that the voltage supplied exceeds the rated blocking voltage.
Electrical Characteristics: (V_D = 400V, T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Forward Blocking Current
I_DRM
T_J = +100°C
T_J = +25°C
–
–
3 mA
–
– 10 µA
Peak Reverse Blocking Current
I_RRM T_J = +100°C
–
– 1.5 mA
T_J = +25°C
–
– 10 µA