NTE313 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

NTE313
Silicon NPN Transistor
High Gain, Low Noise,
VHF Mixer and VHF/RF Amp
Description:
The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier
applications. This device features high power gain, low noise, and excellent forward AGC characteristics.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Total Power Dissipation, P_T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Maximum Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –60° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
DC Current Gain
Current–Gain Bandwidth Product
Output Capacitance
Noise Figure
Power Gain
AGC Current
I_CBO
h_FE
f_T
C_ob
NF
PG
I_AGC
V_CB = 20V, I_E = 0
V_CE = 10V, I_C = 2mA
V_CE = 10V, I_E = –2mA
V_CB = 10V, I_E = 0, f = 1MHz
I_E = –2mA, f = 200MHz
I_E = –2mA, f = 200MHz
PG = –30dB
Min Typ Max Unit
– – 0.2 µA
20 60 200
400 530 – MHz
– 0.5 1.0 pF
– 2.5 3.3 dB
20 23 – dB
– –9 –11 mA