NTE3120 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Phototransistor Detector

NTE3120
Silicon NPN Phototransistor Detector
Features:
D High Sensitivity
D GaAs LED–Wide Spectral Range, with GaAs LED.
D Low Dark Current
D Side–View Plastic Package
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Collector Voltage, V_ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Collector Dissipation P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25° to +85°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +100°C
Electro–Optical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dark Current
I_CEO V_CE = 10V
– 0.01 1.0 µA
Photo Current
Peak Sensitivity Wavelength
Acceptance Half Angle
I_CE(L)
λ_P
q
V_CE = 10V, L = 500 1x, Note 1
V_CE = 10V
Note 2
1 3 – mA
– 800 – nm
– 35 – deg
Rise Time
Fall Time
t_r V_CC = 10V, I_CE(L) = 5mA,
t_f
R_L = 100Ω
– 4 10 µs
– 4 10 µs
Collector–Emitter Saturation Voltage V_CE(sat) I_CE(L) = 1mA, L = 1000 1x, Note 1 – 0.2 0.5 V
Note 1. Source: Tungsten 2856 °K.
Note 2. The angle when the light current is halved.