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NTE3101 Datasheet, PDF (1/2 Pages) NTE Electronics – Photon Coupled Interrupter Module NPN Darlington Output | |||
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NTE3101
Photon Coupled Interrupter Module
NPN Darlington Output
Description:
The NTE3101 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
Darlington connected phototransistor in a plastic housing. The package system is designed to opti-
mize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
gap in the housing provides a means of interrupting the signal with an opaque material, switching the
output from âONâ into an âOFFâ state.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Infrared Emitting Diode
Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/°C
Forward Current, IF
Continuos . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width ⤠1µs, PRR ⤠300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Phototransistor
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V
EmitterâCollector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Total Device
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +100°C
Lead Temperature (During Soldering, 5sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Emitter Characteristics
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Capacitance
V(BR)R
VF
IR
Ci
IR = 10µA
IF = 60mA
VR = 5V
V = 0, f = 1MHz
6ââV
â â 1.7 V
â â 100 nA
â 30 â pF
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
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