NTE3038 Datasheet, PDF (1/2 Pages) NTE Electronics – Phototransistor Silicon, NPN, Visible

NTE3038
Phototransistor
Silicon, NPN, Visible
Features:
D High Sensitivity: I_L = 1mA (Typ)
D Small Size
D Saturation Level Directly Compatible with Most TTL
Applications:
D Optical Switch
D Position Sensor
D Tape, Card Readers
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector−Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter−Collector Voltage, V_ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C (I_L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Collector Power Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0mW/°C
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25° to +85°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30° to +100°C
Opto−Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dark Current
Light Current
Collector−Emitter
Saturation Voltage
I_D (I_CEO) V_CE = 16V, E = 0
I_L V_CE = 3V, E = 0.01mW/cm²
V_CE(sat) I_C = 0.08mA, E = 0.01mW/cm²
− 30 250 nA
0.15 1 − mA
− 0.9 1.2 V
Switching Time Rise Time
t_r
V_CC = 5V, I_C = 10mA, R_L = 100Ω − 0.2 − ms
Fall Time
t_f
− 0.1 − ms