NTE3032 Datasheet, PDF (1/2 Pages) NTE Electronics – Phototransistor Detector NPN-Si, Visible & IR

NTE3032
Phototransistor Detector
NPN–Si, Visible & IR
Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in
industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
or any design requiring radiation sensitivity and stable characteristics.
Features:
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 8mH @ H = 5mW/cm²
D External Base for Added Control
D Annular Passivated Structure for Stability and Reliability
D Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, V_ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Total Device Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Collector Dark Current
Collector–Base Breakdown Voltage
Emitter–Collector Breakdown Voltage
Optical Characteristics
I_CEO
V_(BR)CBO
V_(BR)ECO
V_CC = 10V, H ∼ 0
I_C = 100µA
I_E = 100µA
– – 100 nA
80 – – V
5––V
Light Current
Photo Current Rise Time
Photo Current Fall Time
I_L
V_CC = 5V, R_L = 100Ω, Note 1 8
–
– mA
t_r
R_L = 100Ω, I_L = 1mA (Peak), – 15 – µs
t_f
Note 2
– 15 – µs
Note 1. Radiation flux density (H) equal to 5mW/cm² emitted from a tungsten source at a color
temperature of 2870 K.
Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium
arsenide) light–emitting diode (λ ∼ µm) with a pulse width equal to or greater than 10µs,
I_L = 1mA Peak.