NTE3027 Datasheet, PDF (1/2 Pages) NTE Electronics – Infrared Emitting Diode High Speed for Remote Control

NTE3027
Infrared Emitting Diode
High Speed for Remote Control
Description:
The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a
clear, blue–grey tinted plastic package.
Features:
D Low Forward Voltage
D High Radiant Power and Radiant Intensity
D Suitable for DC and High Pulse Current Operation
D High Reliability
D Standard T–1 3/4 (5mm) Package
Applications:
Infrared remote control and free air transmission systems with low forward voltage and comfort-
able radiation and angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Current, I_F
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Surge Forward Current (Note 2), I_FSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210mW
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Lead Soldering Temperature (t ≤ 5sec, 2mm from case), T_L . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375K/W
Note 1. t_p = 100µs, t_p/T = 0.5
Note 2. t_p = 100µs