NTE300 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Audio Power Amplifier

NTE300 (NPN) & NTE307 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
V_(BR)CBO I_C = 1mA, I_E = 0
V_(BR)EBO I_C = 10mA, R_BE = ∞
V_(BR)EBO I_E = 1mA, I_C = 0
I_CBO V_CB = 25V, I_E = 0
I_EBO V_EB = 5V, I_C = 0
h_FE V_CE = 4V, I_C = 500mA
V_CE(sat) I_C = 1A, I_B = 50mA
V_BE V_CE = 4V, I_C = 50mA
Min Typ Max Unit
50 – – V
40 – – V
5––V
– – 1 µA
– – 1 µA
55 – 300
––1V
– 0.7 – V