NTE2985 Datasheet, PDF (1/3 Pages) NTE Electronics – Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2985
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D R_DS(on) Specified at V_GS = 4V & 5V
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, I_D
Continuous (V_GS = 5V)
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
T_C = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.59W/°C
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Single Pulsed Avalanche Energy (Note 2), E_AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T_L . . . . . . . . . . +300°C
Mounting Torque, 6–32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbf•in (1.1 N•m)
Thermal Resistance:
Maximum Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R_thCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), R_thJA . . . . . . . . . . . . . . . . . . . . . 62K/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 285µH, V_DD = 25V, R_G = 25Ω, Starting T_J = +175°C, I_AS = 30A.
Note 3. I_SD ≤ 30A, di/dt ≤ 200A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ +175°C.