NTE2954 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2954
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D Motor Control
D Lamp Control
D Solenoid Control
D DC–DC Converter
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Drain–Source Voltage (V_GS = 0V), V_DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage (V_DS = 0V), V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, I_D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Avalanche Drain Current (Pulsed, L = 100µH), I_DA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Source Current, I_S
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Maximum Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Channel Temperature Range, T_ch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, R_{th(ch–c)} . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57°C/W
Isolation Voltage (AC for 1 minute, Terminal–to–Case), V_ISO . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (T_ch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
V_(BR)DSS
I_GSS
I_DSS
V_GS(th)
R_DS(on)
V_DS(on)
|y_fs|
V_DS = 0V, I_D = 1mA
V_GS = ±20V, V_DS = 0V
V_DS = 100V, V_GS = 0
V_DS = 10V, I_D = 1mA
V_GS = 10V, I_D = 35A
V_GS = 4V, I_D = 35A
V_GS = 10V, I_D = 35A
V_GS = 10V, I_D = 35A
Min Typ Max Unit
100 –
–
V
– – ±0.1 µA
– – 0.1 mA
1.0 1.5 2.0 V
– 13 17 mΩ
– 14 18 mΩ
– 0.46 0.60 V
– 68 –
S