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NTE28 Datasheet, PDF (1/2 Pages) NTE Electronics – Germanium PNP Transistor High Current, High Gain Amplifier | |||
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NTE28
Germanium PNP Transistor
High Current, High Gain Amplifier
Absolute Maximum Ratings:
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
CollectorâEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
CollectorâBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
EmitterâBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector CurrentâContinuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +110°C
Thermal Resistance, JunctionâtoâCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorâEmitter Breakdown Voltage V(BR)CEO IC = 1A, IB = 0, Note 1
45 â
â
V
V(BR)CES IC = 300mA, VBE = 0
60 â
â
V
Floating Potential
Collector Cutoff Current
VEBF VCB = 60V, IE = 0
â
ICEX VCE = 45V, VBE(off) = 2V, TC = +71°C â
ICBO VCB = 2V, IE = 0
â
VCB = 60V, IE = 0
â
â 0.5 V
â 15 mA
â 0.2 mA
â 4.0 mA
Emitter Cutoff Current
ON Characteristics (Note 1)
IEBO
VBE = 30V, IC = 0
VBE = 30V, IC = 0, TC = +71°C
â
â 4.0 mA
â
â 15 mA
DC Current Gain
hFE IC = 15A, VCE = 2V
IC = 60A, VCE = 2V
60 â 180
15 â
â
CollectorâEmitter Saturation Voltage VCE(sat) IC = 15A, IB = 1A
â
â 0.15 V
BaseâEmitter Saturation Voltage
SmallâSignal Characteristics
VBE(sat)
IC = 60A, IB = 6A
IC = 15A, IB = 1A
IC = 60A, IB = 6A
â
â 0.3 V
â
â 0.6 V
â
â 1.0 V
CommonâEmitter Cutoff Frequency
fαe IC = 15A, VCE = 2V
2
â
â kHz
Note 1. To avoid excessive heating of the collector junction, perform test with pulse method.
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