NTE2708 Datasheet, PDF (1/4 Pages) NTE Electronics – Integrated Circuit NMOS, 8K UV EPROM, 450ns

NTE2708
Integrated Circuit
NMOS, 8K UV EPROM, 450ns
Description:
The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has
8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–
gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (includ-
ing program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up
resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The
data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.
This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or
program changes are required. This device is designed for operation from 0° to +70°C and is supplied
in a 24–Lead DIP package for insertion in mounting–hole rows on 600–mil (15.2 mm) centers.
Features:
D 1024 X 8 Organization
D All Inputs and Outputs Fully TTL Compatible
D Static Operation (No Clocks, No Refresh)
D Performance Ranges:
Max Access: 450ns
Min Cycle: 450ns
D 3–State Outputs for OR–Ties
D 8–Bit Output
D Plug–Compatible Pin–Outs Allowing Interchangeability
Absolute Maximum Ratings: (T_A = 0° to +70°C, Note 1 unless otherwise specified)
Supply Voltage, V_CC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +15V
Supply Voltage, V_DD (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +20V
Supply Voltage, V_SS (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +15V
All Input Voltage (except program) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +20V
Program Input (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to +35V
Output Voltage (operating, with respect to V_SS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –2 to +7V
Operating free–air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permenant
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions beyond those indicated in the “Recommended Operating
Conditions” section of this specification is not implied. Exposure to absolute–maximum–
rated conditions for extended periods may affect device reliability.
Note 2. Under absolute maximum ratings, voltage values are with respect to the most–negative sup-
ply voltage, V_BB (substrate), unless otherwise noted. Throughout the remainder of this data
sheet, voltage values are with respect to V_SS.