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| NTE2661 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Horizontal Deflection Output for HDTV | |||
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NTE2661
Silicon NPN Transistor
Horizontal Deflection Output for HDTV
Features:
D High Speed: tf = 0.15µs Typ
D High Breakdown Voltage: VCBO = 1700V
D Low Saturation Voltage: VCE(sat) = 3V Max
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâtoâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
CollectorâtoâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
EmitterâtoâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 1700V, IE = 0
â â 1.0 mA
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
â â 10 µA
CollectorâEmitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
600 â â V
DC Current Gain
hFE VCE = 5V, IC = 2A
10 â 30 â
VCE = 5V, IC = 11A
4.5 â 8.5
CollectorâEmitter Saturation Voltage VCE(sat) IC = 11A, IB = 2.75A
ââ3V
BaseâEmitter Saturation Voltage
VBE(sat) IC = 11A, IB = 2.75A
â 1.0 1.3 V
Transition Frequency
fT
VCE = 10V, IE = 0.1A
â 1.7 â MHz
Collector Output capacitance
Cob VCB = 10V, IE = 0, f = 1MHz â 290 â pF
Storage Time
Fall Time
tstg IC(peak) = 10A, IB1 = 1.8A, â 2.5 4.0 µs
tf
fH = 64kHz
â 0.15 0.3 µs
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