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NTE2650 Datasheet, PDF (1/3 Pages) NTE Electronics – NTE2649 (NPN) & NTE2650 (PNP) Silicon Complementary Transistors Darlington
NTE2649 (NPN) & NTE2650 (PNP)
Silicon Complementary Transistors
Darlington
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteritics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
ICBO VCB = 200V, IE = 0
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 30mA
DC Current Gain
hFE VCE = 4V, IC = 10A
Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 10mA
Base−Emitter Saturation Voltage
VBE(sat) IC = 10A, IB = 10mA
Transition Frequency
fT
VCE = 12V, IE = 2A
Collector Output Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz
Min Typ Max Unit
−
− 100 µA
−
− 100 µA
200 −
−
V
5000 −
−
−
− 2.5 V
−
− 3.0 V
− 70 − MHz
− 120 − pF