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NTE2650 Datasheet, PDF (1/3 Pages) NTE Electronics – NTE2649 (NPN) & NTE2650 (PNP) Silicon Complementary Transistors Darlington | |||
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NTE2649 (NPN) & NTE2650 (PNP)
Silicon Complementary Transistors
Darlington
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteritics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
ICBO VCB = 200V, IE = 0
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
CollectorâEmitter Breakdown Voltage V(BR)CEO IC = 30mA
DC Current Gain
hFE VCE = 4V, IC = 10A
CollectorâEmitter Saturation Voltage VCE(sat) IC = 10A, IB = 10mA
BaseâEmitter Saturation Voltage
VBE(sat) IC = 10A, IB = 10mA
Transition Frequency
fT
VCE = 12V, IE = 2A
Collector Output Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz
Min Typ Max Unit
â
â 100 µA
â
â 100 µA
200 â
â
V
5000 â
â
â
â 2.5 V
â
â 3.0 V
â 70 â MHz
â 120 â pF
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