NTE2643 Datasheet, PDF(1/2 Page) NTE Electronics – Silicon NPN Transistor, VHF/UHF Low Noise Amp (Surface Mount)

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NTE2643 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor, VHF/UHF Low Noise Amp (Surface Mount)

NTE2643

Silicon NPN Transistor,

VHF/UHF Low Noise Amp

(Surface Mount)

Features:

D Low Noise Figure, High Gain

D NF = 1.1dB, |S21e|2 = 13dB (f = 1GHz)

Absolute Maximum Ratings: (TA = +25Â°C unless otherwise specified)

CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA

Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125Â°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55Â° to +125Â°C

Electrical Characteristics: (TA = +25Â°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

Emitter Cutoff Current

ICBO

IEBO

VCB = 10V, IE = 0

VEB = 1V, IC = 0

â â 1 ÂµA

DC Current Gain

hFE VCE = 10V, IC = 20mA

80 â 240

Output Capacitance

Cob VCB = 10V, IE = 0, f = 1MHz, Note 1 â 1.1 1.6 pF

Reverse Transfer Capacitance Cre

â 0.65 1.05 pF

Transition Frequency

fT VCE = 10V, IC = 20mA

5 7 â GHz

Insertion Gain

|S21e|2 VCE = 10V, IC = 20mA, f = 500MHz â 18 â dB

VCE = 10V, IC = 20mA, f = 1GHz

9.5 13.0 â dB

Noise Figure

NF VCE = 10V, IC = 5mA, f = 500MHz â 1 â dB

VCE = 10V, IC = 5mA, f = 1GHz

â 1.1 2.0 dB

Note 1. Cre is measured by 3 terminal method with capacitance bridge.

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