NTE26 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Low Noise Audio Amplifier

NTE26
Silicon NPN Transistor
Low Noise Audio Amplifier
Features:
D V_CEO = 120V (Min)
D Low Noise: = 1dB (Typ), 10dB (Max)
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Emitter Current, I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –100mA
Collector Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
I_CBO V_CB = 120V, I_E = 0
– – 0.1 µA
Emitter Cutoff Current
I_EBO V_EB = 5V, I_C = 0
– – 0.1 µA
DC Current Gain
h_FE V_CE = 6V, I_C = 2mA
350 – 700
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 10mA, I_B = 1mA
– – 0.3 V
Current Gain–Bandwidth Product
f_T V_CE = 6V, I_C = 1mA
– 100 – MHz
Output Capacitance
C_ob V_CB = 10V, I_E = 0, f = 1MHz
– 3.0 – pF
Noise
NF V_CE = 6V, I_C = 0.1mA, f = 1kHz, – 1.0 10 dB
r_g = 10kΩ