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NTE2593 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amp/Switch | |||
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NTE2593
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage: V(BR)CEO = 2100V Min
D Low Output Capacitance
D Wide ASO Range
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
CollectorâEmitter Saturation Voltage
BaseâEmitter Saturation Voltage
CollectorâBase Breakdown Voltage
CollectorâEmitter Breakdown Voltage
EmitterâBase Breakdown Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB = 2100V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 500µA
VCE = 10V, IC = 500µA
IC = 1mA, IB = 200µA
IC = 1A, IB = 200µA
IC = 10µA, IE = 0
IC = 100µA, RBE = â
IE = 10µA, IC = 0
VCB = 100V, f = 1MHz
Min Typ Max Unit
â â 1 µA
â
1 µA
10 â 60
â 6 â MHz
â â 5V
â â 2V
2100 â â V
2100 â â V
5 â âV
â 1.3 â pF
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