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| NTE2591 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amp/Switch | |||
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NTE2591
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage, High Reliability
D Low Output Capacitance
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
GainâBandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
ICBO VCB = 900V, IE = 0
IEBO VEB = 4V, IC = 0
hFE VCE = 5V, IC =1mA
fT VCE = 10V, IC = 1mA
Cob VCB = 100V, f = 1MHz
VCE(sat) IC = 2mA, IB = 400µA
VBE(sat) IC =2mA, IB = 400µA
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 1mA, RBE = â
V(BR)EBO IE = 1mA, IC = 0
Min Typ Max Unit
â â 1.0 µA
â â 1.0 µA
20 50 120
â 6 â MHz
â 1.6 â pF
ââ5V
ââ2V
2000 â â V
900 â â V
5ââV
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