NTE2579 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch

NTE2579
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D Fast Switching Speed
D Low Saturation Voltage
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Rqange, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Fall Time
I_CBO V_CB = 250V, I_E = 0
I_EBO V_EB = 5V, I_C = 0
h_FE V_CE = 1V, I_C = 1A
V_CE = 1V, I_C = 5A
f_T V_CE = 10V, I_C = 500mA
V_CE(sat) I_C = 5A, I_B = 500mA
V_BE(sat) I_C = 5A, I_B = 500mA
V_(BR)CBO I_C = 1A, I_E = 0
V_(BR)CEO I_C = 1mA, R_BE = ∞
V_(BR)EBO I_E = 1mA, I_C = 0
t_f
V_CC = 50V, I_C = 5A,
I_B1 = –I_B2 = 500mA,
Pulse Width = 20µs,
Duty Cycle ≤ 1%
Min Typ Max Unit
– – 100 µA
– – 100 µA
15 – –
10 – 50
10 40 – MHz
– – 0.8 V
– – 1.5 V
400 – – V
200 – – V
6––V
– – 0.3 µs