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NTE2578 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor TV Horizontal Deflection Output
NTE2578
Silicon NPN Transistor
TV Horizontal Deflection Output
Features:
D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 40V, IE = 0
– – 0.1 mA
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
– – 0.1 mA
DC Current Gain
hFE VCE = 5V, IC = 1A
30 – 60
VCE = 5V, IC = 4A
25 – –
Gain Bandwidth Product
fT
VCE = 5V, IC = 1A
– 10 – MHz
Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 400mA
– 0.5 1.0 V
Base–Emitter Saturation Voltage
VBE(sat) IC = 4A, IB = 400mA
– – 1.5 V
Collector–Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0
200 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞
60 – – V
Emitter–Base Breakdown Voltage
V(BR)EBO IC = 5mA, IC = 0
6––V
Fall Time
tf
VCC = 50V, VBB = 5V,
– 0.2 0.5 µs
IC = 5A, IB1 = –IB2 = 500mA,
PW = 20µs, Duty Cycle ≤
2.5%
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