NTE2558 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode

NTE2558
Silicon NPN Transistor
Darlington, High Voltage, High Speed Switch
w_{/ Damper Diode}
Features:
D High Reliability
D High Collector–Base Breakdown Voltage
D On–Chip Damper Diode
Applications:
D High–Voltage, High–Power Switching
D Induction Cookers
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current. I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
I_CBO V_CB = 800V, I_E = 0
I_EBO V_EB = 5V, I_C = 0
h_FE V_CE = 5V, I_C = 15A
V_CEO(sus) I_C = 100mA
V_CE(sat) I_C = 15A, I_B = 0.75A
V_BE(sat) I_C = 15A, I_B = 0.75A
V_(BR)CBO I_C = 5mA, I_E = 0
Diode Forward Voltage
Fall Time
V_F I_EC = 15A
t_f
I_C = 15A, I_B1 = 1A,
I_B2 = –5A, V_CC = 200V,
R_L = 13.3Ω
Min Typ Max Unit
– – 0.1 mA
– – 600 mA
25 – –
800 – – V
– – 3.0 V
– – 2.5 V
150 –
0
–V
– – 2.0 V
– – 2.0 µs