NTE2553 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington, Motor Driver, Switch

NTE2553
Silicon NPN Transistor
Darlington, Motor Driver, Switch
Features:
D High DC Current Gain
D High Breakdown Voltage
D Isolated TO220 Type Package
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, P_C
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cut–Off Current
I_CBO V_CB = 300V, I_E = 0
Emitter Cut–Off Current
I_EBO V_EB = 6V, I_C = 0
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0
Collector–Emitter Sustaining Voltage V_CEO(sus) I_C = 250mA, L 40mH
DC Current Gain
h_FE V_CE = 2V, I_C = 5A
V_CE = 2V, I_C = 10A
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 10A, I_B = 100mA
Base–Emitter Saturation Voltage V_BE(sat) I_C = 10A, I_B = 100mA
Emitter–Collector Forward Voltage V_ECF I_E = 10A, I_B = 0
Transition Frequency
f_T
V_CE = 2V, I_C = 1A
Collector Output Capacitance
C_ob V_CB = 10V, I_E = 0, f = 1MHz
Turn–On Time
Storage Time
t_on V_CC = 100V,
t_stg
I_B1 = –I_B2 = 100mA
Fall Time
t_f
Min Typ Max Unit
– – 100 µA
50 – 150 mA
300 – – V
200 – – V
500 – 5000
100 – –
– – 2.0 V
– – 2.3 V
– 1.5 2.0 V
– 40 – MHz
– 200 – pF
– – 1.0 µs
– – 12 µs
– – 2.0 µs