NTE2540 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington, High Voltage Switch

NTE2540
Silicon NPN Transistor
Darlington, High Voltage Switch
Features:
D High DC Current Gain: h_FE = 600 Min (V_CE = 2V, I_C = 2A)
D Monolithic Construction ^w/Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Base Current. I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, P_C
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Emitter–Collector Forward Voltage
Collector Output Capacitance
Turn–On Time
Storage Time
Fall Time
I_CBO V_CB = 600V, I_E = 0
– – 0.5 mA
I_EBO V_EB = 5V, I_C = 0
– – 3 mA
V_(BR)CEO I_C = 10mA, I_B = 0
400 – – V
h_FE V_CE = 2V, I_C = 2A
600 – –
V_CE = 2V, I_C = 4A
100 – –
V_CE(sat) I_C = 4A, I_B = 40mA
– – 2.0 V
V_BE(sat) I_C = 4A, I_B = 40mA
– – 2.5 V
V_ECF I_E = 4A, I_B = 0
– – 3.0 V
C_ob V_CB = 50V, I_E = 0, f = 1MHz – 35 – pF
t_on V_CC = 100V,
t_stg
I_B1 = –I_B2 = 40mA,
Duty Cycle ≤ 1%
t_f
– 1 – µs
– 8 – µs
– 5 – µs