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NTE2533 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High-Definition Color Display Horizontal Deflection Output
NTE2533
Silicon NPN Transistor
High–Definition Color Display
Horizontal Deflection Output
Features:
D High Speed: tf = 100ns Typ
D High Breakdown Voltage: VCBO = 1500V
D High Reliability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Collector Sustaining Voltage
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Storage Time
Fall Time
ICES VCE = 1500V
ICBO VCB = 800V, IE = 0
VCEO(sus) IC = 100mA, IB = 0
IEBO VEB = 4V, IC = 0
hFE VCE = 5V, IC = 1A
VCE = 5V, IC = 20A
VCE(sat) IC = 20A, IB = 5A
VBE(sat) IC = 20A, IB = 5A
tstg IC = 12A, IB1 = 2.4A,
tf
IB2 = –4.8A
Min Typ Max Unit
– – 1.0 mA
– – 10 µA
800 – – V
– – 1.0 mA
8 – 30 –
4–8
––5V
– – 1.5 V
– – 3 µs
– – 0.2 µs
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