NTE2508 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Video Output for HDTV

NTE2508 (NPN) & NTE2509 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
Features:
D High Gain Bandwidth Product: f_T = 500MHz
D High Breakdown Voltage: V_CEO = 120V Min
D Low Reverse Transfer Capacitance and Excellent HF Response
Applications:
D High–Definition CRT Display Video Output
D Wide–Band Amp
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector to Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector to Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter to Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Collector Dissipation, P_C
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
I_CBO
I_EBO
h_FE
f_T
V_CB = 80V, I_E = 0
V_EB = 2V, I_C = 0
V_CE = 10V, I_C = 50mA
V_CE = 10V, I_C = 200mA
V_CE = 10V, I_C = 50mA
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
40 – 320
20 – –
– 400 – MHz