NTE2506 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Frequency Video Driver

NTE2506
Silicon NPN Transistor
High Frequency Video Driver
Description:
The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.
Features:
D High Breakdown Voltage
D Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V
Collector–Emitter Voltage (R_BE = 100Ω), V_CER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
DC Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Power Dissipation (T_S ≤ +85°C, Note 1), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Soldering Point (T_S ≤ +85°C, Note 1), R_thJS . . . . . . . . . . 18K/W
Note 1. T_S is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 0.1mA
115 – – V
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 10mA
95 – – V
V_(BR)CER I_C = 10mA, R_BE = 100Ω
110 – – V
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 0.1mA
3––V
Collector Cutoff Current
I_CES I_B = 0, V_CE = 50V
– – 100 µA
I_CBO I_E = 0, V_CB = 50V
– – 20 µA
DC Current Gain
h_FE I_C = 100mA, V_CE = 10V, T_A = +25°C
20 35 –
Transition Frequency
f_T
I_C = 100mA, V_CE = 10V, f = 100MHz,
0.8 1.2 – GHz
T_A = +25°C
Collector–Base Capacitance
C_cb I_C = 0, V_CB = 10V, f = 1MHz, T_A = +25°C – 2.0 – pF
Collector Capacitance
C_c
I_E = i_e = 0, V_CB = 10V f = 1MHz
– 3.5 – pF