NTE2430 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)

NTE2430
Silicon NPN Transistor
High Voltage Amp/Switch
(Compl to NTE2431)
Description:
The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage (Open Base), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Emitter–Base Voltage (Open Collector), V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (T_A ≤ +25°C, Note 1), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm², thickness = 0.7mm.
Electrical Characteristics: (T_J = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Collector Capacitance
Transitional Frequency
I_CES
I_EBO
V_CE(sat)
V_BE(sat)
h_FE
C_c
f_T
V_CE = 300V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 50mA, I_B = 4mA
I_C = 50mA, I_B = 4mA
V_CE = 10V, I_C = 20mA
I_E = I_e = 0, V_CB = 10, f = 1MHz
V_CE = 10V, I_C = 10mA, f = 5MHz
Min Typ Max Unit
–
– 20 nA
–
– 10 µA
–
– 500 mV
–
– 1.3 V
40 –
–
–
–
2 pF
70 –
– MHz