|
NTE2416 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors High Current General Purpose Amp/Switch | |||
|
NTE2416 (NPN) & NTE2417 (PNP)
Silicon Complementary Transistors
Digital w/2 BuiltâIn Bias 22k Resistors
(Surface Mount)
Features:
D BuiltâIn Bias Resistors
D Small SOTâ23 Surface Mount Package
Applications:
D Switching Circuits
D Inverters
D Interface Circuits
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
ICBO VCB = 40V, IE = 0
ICEO VCE = 40V, IB = 0
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
DC Current Gain
hFE VCE = 5V, IC = 10mA
CollectorâBase Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0
CollectorâEmitter Breakdown Voltage V(BR)CBO IC = 100µA, RBE = â
CollectorâEmitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA
Current GainâBandwidth Product
NTE2416
fT
VCE = 10V, IC = 5mA
NTE2417
Min Typ Max Unit
â â 0.1 µA
â â 0.5 µA
70 113 150 µA
50 â â
50 â â V
50 â â V
â 0.1 0.3 V
â 250 â MHz
â 200 â MHz
|
▷ |