NTE2404 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Darlington, General Purpose

NTE2404 (NPN) & NTE2405 (PNP)
Silicon Complementary Transistors
Darlington, General Purpose
Description:
The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an
SOT–23 type surface mount case designed for general–purpose applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (T_A = +25°C, Note 1), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Ambient (Note 1), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350K/W
Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm).
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Current
Emitter–Base Current
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Capacitance
I_CBO
I_EBO
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
V_CE(sat)
V_BE(sat)
h_FE
f_T
C_c
V_CBO = 30V
V_EB = 10V
I_C = 10mA
I_C = 10µA
I_E = 100nA
I_C = 100mA, I_B = 0.1mA
I_C = 100mA, I_B = 0.1mA
I_C = 1mA, V_CE = 5V
I_C = 10mA, V_CE = 5V
I_C = 100mA, V_CE = 5V
I_C = 30mA, V_CE = 5V, f = 100MHz
I_E = 0, V_CB = 30V
Min Typ Max Unit
–
– 100 nA
–
– 100 nA
30
–
–V
40
–
–V
10
–
–V
–
–
1V
–
– 1.5 V
4000 –
–
10000 –
–
20000 –
–
– 220 – MHz
–
3.5 – pF